Doped Contacts for High-Longevity Optically Activated, High Gain GaAs Photoconductive Semiconductor Switches [electronic resource]
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Format: | Government Document Electronic eBook |
Language: | English |
Published: |
Washington, D.C. : Oak Ridge, Tenn. :
United States. Department of Energy ; distributed by the Office of Scientific and Technical Information, U.S. Department of Energy,
1999.
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Internet
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Call Number: |
E 1.99:sand99-3189j
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E 1.99:sand99-3189j | Available |