Doped Contacts for High-Longevity Optically Activated, High Gain GaAs Photoconductive Semiconductor Switches [electronic resource]
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| Online Access: |
Online Access |
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| Format: | Government Document Electronic eBook |
| Language: | English |
| Published: |
Washington, D.C. : Oak Ridge, Tenn. :
United States. Department of Energy ; distributed by the Office of Scientific and Technical Information, U.S. Department of Energy,
1999.
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| Abstract: | The longevity of high gain GaAs photoconductive semiconductor switches (PCSS) has been extended to over 100 million pulses. This was achieved by improving the ohmic contacts through the incorporation of a doped layer that is very effective in the suppression of filament formation, alleviating current crowding. Damage-free operation is now possible with virtually infinite expected lifetime at much higher current levels than before. The inherent damage-free current capacity of the bulk GaAs itself depends on the thickness of the doped layers and is at least 100A for a dopant diffusion depth of 4pm. The contact metal has a different damage mechanism and the threshold for damage (≈40A) is not further improved beyond a dopant diffusion depth of about 2{micro}m. In a diffusion-doped contact switch, the switching performance is not degraded when contact metal erosion occurs, unlike a switch with conventional contacts. This paper will compare thermal diffusion and epitaxial growth as approaches to doping the contacts. These techniques will be contrasted in terms of the fabrication issues and device characteristics. |
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| Item Description: | Published through SciTech Connect. 12/17/1999. "sand99-3189j" IEEE Transactions on Plasma Science FT. MAR,ALAN; THORNTON,R.L.; HJALMARSON,HAROLD P.; BACA,ALBERT G.; ZUTAVERN,FRED J.; LOUBRIEL,GUILLERMO M.; O'MALLEY,MARTIN W.; HELGESON,WESLEY D.; BROWN,DARWIN JAMES; DOLDSON,R.D. |
| Physical Description: | 5 pages : digital, PDF file. |