Preparation and properties of evaporated CdTe films [electronic resource] : Final subcontract report, 16 February 1985-31 March 1987.
Cadmium Telluride; Hot Wall Vacuum Evaporation; Photovoltaics; Doping.
Saved in:
Online Access: |
Online Access (via OSTI) |
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Format: | Government Document Electronic eBook |
Language: | English |
Published: |
Oak Ridge, Tenn. :
distributed by the Office of Scientific and Technical Information, U.S. Department of Energy,
1987.
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Subjects: |
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245 | 0 | 0 | |a Preparation and properties of evaporated CdTe films |h [electronic resource] : |b Final subcontract report, 16 February 1985-31 March 1987. |
260 | |a Oak Ridge, Tenn. : |b distributed by the Office of Scientific and Technical Information, U.S. Department of Energy, |c 1987. | ||
300 | |a Pages: 51 : |b digital, PDF file. | ||
336 | |a text |b txt |2 rdacontent. | ||
337 | |a computer |b c |2 rdamedia. | ||
338 | |a online resource |b cr |2 rdacarrier. | ||
500 | |a Published through SciTech Connect. | ||
500 | |a 07/01/1987. | ||
500 | |a "seri/str-211-3190" | ||
500 | |a "DE87012270" | ||
500 | |a Bube, R H; Fahrenbruch, A L; Chien, K F. | ||
500 | |a Stanford Univ., CA (USA) | ||
500 | |a Solar Energy Research Inst., Golden, CO (USA) | ||
520 | 3 | |a Previous work on evaporated CdTe films for photovoltaics showed no clear path to successful p-type doping of CdTe during deposition. Post-deposition annealing of the films in various ambients thus was examined as a means of doping. Anneals were done in Te, Cd, P, and As vapors and in vacuum, air and Ar, all of which showed large effects on series resistance and diode parameters. With As, series resistance values of In/p-CdTe/graphite structures decreased markedly. This decrease was due to a decrease in grain boundary and/or back contact barrier height, and thus was due to large increases in mobility; the carrier density was not altered substantially. Although the series-resistance decreases were substantial, the diode characteristics became worse. The decreases were not observed when CdS/CdTe cells were fabricated on Te vapor-annealed films. Preparation of ZnO films by reactive evaporation yielded promising results. Deposition of p-ZnTe films by hot-wall vapor evaporation, using conventional techniques, yielded acceptable films without intentional doping. | |
520 | 0 | |a Cadmium Telluride; Hot Wall Vacuum Evaporation; Photovoltaics; Doping. | |
536 | |b AC02-83CH10093. | ||
650 | 7 | |a Cadmium Telluride Solar Cells. |2 local. | |
650 | 7 | |a Fabrication. |2 local. | |
650 | 7 | |a Cadmium Tellurides. |2 local. | |
650 | 7 | |a Deposition. |2 local. | |
650 | 7 | |a Thin Films. |2 local. | |
650 | 7 | |a Cadmium Compounds. |2 local. | |
650 | 7 | |a Chalcogenides. |2 local. | |
650 | 7 | |a Direct Energy Converters. |2 local. | |
650 | 7 | |a Equipment. |2 local. | |
650 | 7 | |a Films. |2 local. | |
650 | 7 | |a Photoelectric Cells. |2 local. | |
650 | 7 | |a Photovoltaic Cells. |2 local. | |
650 | 7 | |a Solar Equipment. |2 local. | |
650 | 7 | |a Tellurides. |2 local. | |
650 | 7 | |a Solar Cells. |2 local. | |
650 | 7 | |a Tellurium Compounds. |2 local. | |
650 | 7 | |a Solar Energy. |2 edbsc. | |
650 | 7 | |a Materials Science. |2 edbsc. | |
710 | 1 | |a United States. |b Department of Energy. |b Office of Scientific and Technical Information. |4 dst. | |
856 | 4 | 0 | |u http://www.osti.gov/scitech/biblio/6302999 |z Online Access (via OSTI) |
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952 | f | f | |p Can circulate |a University of Colorado Boulder |b Online |c Online |d Online |e E 1.99:seri/str-211-3190 |h Superintendent of Documents classification |i web |n 1 |