Selected etching and annealing properties of Brazilian quartz crystals for solid state track recorder applications [electronic resource]

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Bibliographic Details
Online Access: Online Access
Corporate Authors: Hanford Engineering Development Laboratory (Researcher), Hanford Site (Wash.) (Researcher)
Format: Government Document Electronic eBook
Language:English
Published: Richland, Wash. : Oak Ridge, Tenn. : Hanford Site (Wash.) ; distributed by the Office of Scientific and Technical Information, U.S. Dept. of Energy, 1981.
Subjects:

MARC

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245 0 0 |a Selected etching and annealing properties of Brazilian quartz crystals for solid state track recorder applications  |h [electronic resource] 
260 |a Richland, Wash. :  |b Hanford Site (Wash.) ;  |a Oak Ridge, Tenn. :  |b distributed by the Office of Scientific and Technical Information, U.S. Dept. of Energy,  |c 1981. 
300 |a Pages: 5 :  |b digital, PDF file. 
336 |a text  |b txt  |2 rdacontent. 
337 |a computer  |b c  |2 rdamedia. 
338 |a online resource  |b cr  |2 rdacarrier. 
500 |a Published through SciTech Connect. 
500 |a 01/01/1981. 
500 |a "hedl-sa-2392-fp" 
500 |a " conf-8109100-1" 
500 |a "DE82003793" 
500 |a 11. international conference on solid nuclear track detectors, Bristol, UK, 7 Sep 1981. 
500 |a Gold, R.; Ruddy, F.H.; Roberts, J.H. 
520 3 |a The etching and annealing properties of Brazilian quartz crystals are under investigation to determine their suitability for use as solid state track recorders (SSTR) and damage monitors in nuclear reactor environments, where temperatures and neutron fluences are high. Observer objectivity in counting fission tracks has been established at the 1 to 2% level, and a method of standardizing chemical etching from one sample of quartz to another has been found. A method has also been found to make corrections for track loss due to thermal annealing in terms of the effect of the annealing on the track size in the direction of maximum bulk etch rate parallel to the 100 plane, provided the fractional track loss does not exceed approx. 40% 
536 |b AC06-76FF02170. 
650 7 |a Annealing.  |2 local. 
650 7 |a Radiation Detectors.  |2 local. 
650 7 |a Silicon Oxides.  |2 local. 
650 7 |a Surface Finishing.  |2 local. 
650 7 |a Performance.  |2 local. 
650 7 |a Oxide Minerals.  |2 local. 
650 7 |a Quartz.  |2 local. 
650 7 |a Silicon Compounds.  |2 local. 
650 7 |a Measuring Instruments.  |2 local. 
650 7 |a Dielectric Track Detectors.  |2 local. 
650 7 |a Radiation Effects.  |2 local. 
650 7 |a Heat Treatments.  |2 local. 
650 7 |a Oxygen Compounds.  |2 local. 
650 7 |a Physical Radiation Effects.  |2 local. 
650 7 |a Minerals.  |2 local. 
650 7 |a Oxides.  |2 local. 
650 7 |a Etching.  |2 local. 
650 7 |a Chalcogenides.  |2 local. 
650 7 |a Materials Science.  |2 edbsc. 
650 7 |a Instrumentation Related To Nuclear Science And Technology.  |2 edbsc. 
710 2 |a Hanford Engineering Development Laboratory.  |4 res. 
710 2 |a Hanford Site (Wash.).  |4 res. 
710 1 |a United States.  |b Department of Energy.  |b Office of Scientific and Technical Information.  |4 dst. 
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