OPTIMUM INITIAL DESIGN CRITERIA FOR THE IMPURITY PROFILES AND GEOMETRIES OF RADIATION HARDENED DIFFUSED SILICON P--N JUNCTION DEVICES. [electronic resource]

Silicon Junctions/Radiation Hardness Of Diffused Silicon P--N, Design Criteria For Optimization Of.

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Bibliographic Details
Online Access:	Online Access
Main Authors:	Goben, C.A (Author), Han, Y.P (Author), Irani, C.H (Author), Bereisa, J. Jr (Author)
Corporate Author:	University of Missouri--Rolla (Researcher)
Format:	Government Document Electronic eBook
Language:	English
Published:	Oak Ridge, Tenn. : distributed by the Office of Scientific and Technical Information, U.S. Department of Energy, 1971.
Subjects:	Design. Junctions. Optimization. Silicon. N26500* > Instrumentation > Radiation Effects On Instruments & Instrument Components.

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Call Number:	E 1.99: conf-701056--1
E 1.99: conf-701056--1	Available