Ferroelectric random access memories [electronic resource] : fundamentals and applications / Hiroshi Ishiwara, Masanori Okuyama, Yoshihiro Arimoto (eds.)

In fabrication of FeRAMs, various academic and technological backgrounds are necessary, which include ferroelectric materials, thin film formation, device physics, circuit design, and so on. This book covers from fundamentals to applications of ferroelectric random access memories (FeRAMs). The book...

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Bibliographic Details

Online Access:	Full Text (via Springer)
Corporate Author:	LINK (Online service)
Other Authors:	Ishiwara, Hiroshi, 1945-, Okuyama, Masanori, 1946-, Arimoto, Yoshihiro, 1952-
Format:	Electronic eBook
Language:	English
Published:	Berlin ; Hong Kong : Springer-Verlag, ©2004.
Series:	Topics in applied physics ; v. 93.
Subjects:	Ferroelectric storage cells.