Carrier-induced transient defect mechanism for non-radiative recombination in InGaN light-emitting devices [electronic resource]

Electronic Properties And Materials; Electronic Structure.

Bibliographic Details

Online Access:	Online Access
Corporate Author:	Rensselaer Polytechnic Institute (Researcher)
Format:	Government Document Electronic eBook
Language:	English
Published:	Washington, D.C. : Oak Ridge, Tenn. : United States. Department of Energy. ; distributed by the Office of Scientific and Technical Information, U.S. Department of Energy, 2016.
Subjects:	Condensed Matter Physics, Superconductivity And Superfluidity.