Growth and characterization of tetragonal (rutile) GeO2 crystals / John W. Goodrum.

The use of germanium in semiconductor devices continues in importance but adequate substrate materials and/or passivating (insulating) films for Ge are still lacking. Although such properties of the tetragonal oxide of germanium as chemical inertness and low electrical conductivity indicate it would...

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Bibliographic Details

Main Author:	Goodrum, John W.
Corporate Author:	Air Force Cambridge Research Laboratories (U.S.)
Format:	Government Document Book
Language:	English
Published:	L.G. Hanscom Field, Mass. : Air Force Cambridge Research Laboratories, Air Force Systems Command, United States Air Force, 1971.
Series:	AFCRL ; 71-187. Physical sciences research papers (Air Force Cambridge Research Laboratories (U.S.)) ; no. 449.
Subjects:	Crystal growth. Germanium compounds. Electrooptics. Semiconductors.