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On the formation of the 15R type in the beta-alpha transformation of SiC / Yoshizo Inomata, Zenzaburo Inoue, Kazunori Kijima.

The transformation of high-purity beta-SiC to alpha-SiC was studied experimentally in the temperature range from 2100C to 2300C.

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Bibliographic Details
Online Access:	Search for the full-text version of this title in HathiTrust
Main Authors:	Inomata, Yoshizō (Author), Inoue, Zenzaburo (Author), Kijima, Kazunori (Author)
Corporate Author:	Air Force Cambridge Research Laboratories (U.S.)
Format:	Government Document Book
Language:	English
Published:	L.G. Hanscom Field, Bedford, Massachusetts : Air Force Cambridge Research Laboratories, United States Air Force, 1970.
Series:	AFCRL ; 70-405. Translations (Air Force Cambridge Research Laboratories (U.S.)) ; no. 82.
Subjects:	Silicon carbide. Crystal growth. Crystals > Structure. Twinning (Crystallography) Phase transformations (Statistical physics)

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Call Number:	D 301.45/4-3:70-0405
D 301.45/4-3:70-0405	Available Place a Hold