Basic equations for the modeling of gallium nitride (GaN) high electron mobility transistors (HEMTs) / Jon C. Freeman.

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Bibliographic Details
Online Access:	Online Access Online Access
Main Author:	Freeman, Jon C. (Author)
Format:	Government Document eBook
Language:	English
Published:	Cleveland, Ohio : National Aeronautics and Space Administration, Glenn Research Center, February 2003.
Series:	NASA technical memorandum ; 2003-211983.
Subjects:	Gallium nitrides. Field effect transistors. High electron mobility transistors.

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Call Number:	NAS 1.15:211983
NAS 1.15:211983	Available